Title:
Method for film deposition
Document Type and Number:
Japanese Patent JP6071537
Kind Code:
B2
Abstract:
A method of depositing a film using an atomic layer deposition (ALD) method while rotating a turntable provided inside a chamber and including a substrate mounting portion, onto which a substrate can be mounted, to cause the substrate to pass through first and second process areas, into which different gases to be mutually reacted are respectively supplied, including coating the turntable with the film under a state where the wafer is not mounted onto the turntable, the turntable is rotated, and the substrate mounting portion has a predetermined temperature; and processing to deposit the film on the wafer under a state where the wafer is mounted onto the turntable, the turntable is rotated, and the substrate has a temperature equal to or less than the predetermined temperature.
Inventors:
Kentaro Oshita
Masato Kogane
Hiroko Sasaki
Hiroaki Ikekawa
Masato Kogane
Hiroko Sasaki
Hiroaki Ikekawa
Application Number:
JP2012283175A
Publication Date:
February 01, 2017
Filing Date:
December 26, 2012
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
C23C16/44; C23C16/34; C23C16/455; H01L21/28; H01L21/285
Domestic Patent References:
| JP2011135046A | ||||
| JP2011132589A | ||||
| JP2004285469A |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito
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