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Title:
METHOD OF FORMING BORON-DOPED SILICA FILM AND MANUFACTURE OF ELECTRONIC COMPONENT
Document Type and Number:
Japanese Patent JP2000277516
Kind Code:
A
Abstract:

To obtain a highly reliable insulating film or the like by providing an optical liquid level sensor as a liquid amount monitoring means for triethylborate in a triethylborate supply apparatus.

An optical detector probe 14 at the top of an optical liquid level sensor 13 is arranged at a specified position near the bottom of the body of a TEB(triethylborate) supply apparatus. A light transmitter/receiver 15 and a detector circuit 16 are connected to the optical liquid level sensor 13. The residual amount of TEB is detected by a signal outputted from the detector circuit 16, and when the residual amount is fewer than a specified value, various kinds of control such as TEB supply stoppage or CVD apparatus operation stoppage are conducted. Tetraethoxysilane(TEOS), which is the raw material compound for silicon, is introduced from a TEOS vaporizer to a reaction chamber. As a result, a boron-doped silica film having remarkably low permittivity and excellent insulating capability can be formed.


Inventors:
NAKAGAWA SATOSHI
ONOZAWA KAZUHISA
Application Number:
JP2000008556A
Publication Date:
October 06, 2000
Filing Date:
January 18, 2000
Export Citation:
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Assignee:
ASAHI DENKA KOGYO KK
International Classes:
G01F23/28; C23C16/448; H01L21/31; H01L21/316; (IPC1-7): H01L21/316; C23C16/448; G01F23/28; H01L21/31
Attorney, Agent or Firm:
Soga Doteru (6 people outside)