Title:
METHOD OF FORMING COMPOUND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH1131701
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To form a compound semiconductor device by using an insulating substrate, instead of a semi-insulating compound semiconductor substrate. SOLUTION: A cap layer 4, an operating layer 6, and an AIN film 8 are formed on a semi-insulating GaAs substrate 2, and an AIN insulating substrate 10 is adhered to the AIN film 8. Next, the back face side of the semi-insulating GaAs substrate 2 is removed by etching or the like, so that the cap layer 4 can be exposed. A semiconductor device is formed on the cap layer 4, so that a compound semiconductor device using the AIN insulating substrate 10 can be formed.
Inventors:
NAKAJIMA SHIGERU
Application Number:
JP18660597A
Publication Date:
February 02, 1999
Filing Date:
July 11, 1997
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
H01L29/812; H01L21/338; (IPC1-7): H01L21/338; H01L29/812
Attorney, Agent or Firm:
Yoshiki Hasegawa (3 outside)