To form a deposited film having uniform film thickness and film quality with a plasma CVD method by introducing raw material gas into plural hollow parts extending in the longitudinal direction arranged in an electrode surrounding a base body and supplying the gas toward the base body through plural opening holes communicated with the hollow parts.
A cylindrical supporting body 102 provided with a heater 105 having the same axis as the cylindrical electrode 101, is disposed in the inner space of the electrode 101. In this electrode 101, plural hollow parts 103 extending in the longitudinal direction, are parallelly disposed in the peripheral direction and plural gas discharging holes 109 communicated with the hollow parts 103 and directing the supporting body 102, are opened, and connected with vertically arranged gas distributing tubes 110, 111 distributing the gas into the inner peripheral direction. The cylindrical base body is disposed on this supporting body 102 and heated to a prescribed temp. with the heater 105. Further, the raw material gas is controllably supplied in each hollow part 103 as the raw material gas introducing tube through the gas distributing tubes 110, 111 from the discharging holes 109. The deposited film is formed on the base body by evacuating this inner space and generating the high frequency plasma.
KATAGIRI HIROYUKI
MATSUOKA HIDEAKI
TAKADA KAZUHIKO
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