To provide a method for forming such a high-quality deposition film as to cause few image defects, when forming the deposition film which can be used for an electrophotographic photoreceptor.
The method for forming the deposition film includes placing an electroconductive substrate in a reaction vessel which can be decompressed and subjecting the electroconductive substrate to the deposition-film-forming process which decomposes a source gas supplied into the reaction vessel with a high-frequency power and forms a silicon-based non-single-crystal film on the electroconductive substrate. The inner pressure in the deposition-film-forming process is 13.4 Pa or less. The deposition-film-forming process includes an inner-pressure changing process including an inner-pressure raising step and an inner-pressure lowering step. The inner-pressure changing process is a process of changing the inner pressure in the deposition-film-forming process in which the type and supply ratio of the source gas are constant.
MURAYAMA HITOSHI
TAZAWA DAISUKE
KAWAMURA KUNIMASA
Yuichi Uchio