To provide a dielectric thin film forming method by which a dielectric film having reliability can be formed even if the film thickness is small and also to provide the reliable dielectric thin film formed by this method.
In the film deposition step, a material solution 4 is atomized under a reduced pressure by a two-fluid technique using an inert gas and sprayed onto a heated substrate 1 to deposit a thin film on the substrate 1, with the thin film then heat-treated in an oxidizing atmosphere. The material solution is supplied at a rate that is greater than the vaporization rate of the solvent in the film deposited on the substrate. The supply of the material solution is stopped and the solvent remaining in the film is vaporized. Then the film is heat-treated in an oxidizing atmosphere. The substrate is heated to a temperature in the range of 100-300°C in the film deposition step.
TAKESHIMA YUTAKA
SHIBUYA MITSUKI
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