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Title:
METHOD FOR FORMING ELECTRIC DEVICE INCLUDING THIN SOLID ELECTROLYTIC CAPACITOR EMBEDDABLE IN SUBSTRATE
Document Type and Number:
Japanese Patent JP2013243392
Kind Code:
A
Abstract:

To provide an improved method for forming a capacitor.

The method includes the steps of: preparing a metal foil; forming a dielectric on the metal foil; applying a non-conductive polymer dam on the dielectric to isolate the dielectric into a plurality of discrete regions; forming a cathode in at least one discrete region of the discrete regions on the dielectric; and cutting the metal foil at the non-conductive polymer dam to isolate at least one capacitor comprising one cathode, one discrete region of the dielectric and a portion of the metal foil including the discrete region of the dielectric.


Inventors:
JOHN D PRYMAK
CHRIS STOLARSKI
DAVID JACOBS
CHRIS WAYNE
PHILIP LESSNER
JOHN T KINARD
ALETHIA MELODY
GREGORY DUNN
ROBERT T CROSWELL
REMY J CHELINI
Application Number:
JP2013153363A
Publication Date:
December 05, 2013
Filing Date:
July 24, 2013
Export Citation:
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Assignee:
KEMET ELECTRONICS CORP
International Classes:
H01G9/004; H01G9/00
Domestic Patent References:
JPH02194518A1990-08-01
JP2006245476A2006-09-14
JP2001185460A2001-07-06
JP2003045762A2003-02-14
JPH01127231U1989-08-31
JPH02194518A1990-08-01
JP2001185460A2001-07-06
JP2006245476A2006-09-14
Attorney, Agent or Firm:
Patent Business Corporation Saegusa International Patent Office