To provide a method for forming an electroconductive layer having a transferred shape in an electrocasting method, which can forcibly peel the electroconductive layer from a master mold, and forms the electroconductive layer while controlling its adhesive force so that the electroconductive layer is not peeled in an electrodeposition process, in an electrocasting process of sequentially stacking the electroconductive layer, an electroformed layer and an appropriate backing material on a master mold, peeling the electroconductive layer from the surface of the master mold at their interface, and transferring the shape of the master mold to the electroconductive layer.
This forming method includes dispersingly depositing an anchor metal 7 on the surface of a master mold (M) with an arc plasma method, and vapor-depositing a metal different from the anchor metal thereon with a physical vapor deposition method to form an electroconductive layer 8. Specifically, the method includes depositing the anchor metal 7 on the surface of a master mold made from a Si monocrystal so as to have a Cr density of 6,000 to 15,000(1010 (atoms/cm2)), and forming a Pt electroconductive layer thereon with an electron beam vacuum deposition technique.
OSAKA IND PROMOTION ORG
| JP2008031555A | 2008-02-14 | |||
| JPS61221391A | 1986-10-01 |
Norio Morioka
Hisayoshi Sekiguchi
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