Title:
METHOD OF FORMING ELECTRODE FOR POSITIVE TEMP. COEFFICIENT CERAMIC SEMICONDUCTOR
Document Type and Number:
Japanese Patent JPH07288203
Kind Code:
A
Abstract:
PURPOSE: To provide a positive temp. coefficient ceramic semiconductor having electrodes tightly fixed to a positive temp. coefficient ceramic semiconductor element wherein the oxidization of the electrode's surface is suppressed.
CONSTITUTION: On the surface of a positive temp. coefficient ceramic semiconductor element 1 made of a material with a barium titanate base, electrodes 2 are formed after coating and baking an activating agent made of a Pa compound. An Ag-base cover electrode 3 iis formed on the surface of each electrode 2. This suppresses this surface from being oxidized and improve the adhesive force of the electrode 3 to the element 1.
Inventors:
NIWA JUN
MUKAI HIROKATSU
MUKAI HIROKATSU
Application Number:
JP8121195A
Publication Date:
October 31, 1995
Filing Date:
April 06, 1995
Export Citation:
Assignee:
NIPPON DENSO CO
International Classes:
H01C17/28; H01C7/02; (IPC1-7): H01C7/02; H01C17/28
Domestic Patent References:
| JPS5533165A | 1980-03-08 |
Attorney, Agent or Firm:
Hirohiko Usui