Title:
METHOD OF FORMING GERMANIUM THIN FILM
Document Type and Number:
Japanese Patent JP2013181231
Kind Code:
A
Abstract:
To provide a method of forming a germanium thin film, by which film thickness can be made smaller while any structure concerned about characteristics of a semiconductor device is prevented from being caused and appropriate flatness is maintained.
A method of forming a germanium thin film includes a step of forming a germanium seed layer by absorbing a germanium on a surface of an underlying film using an amino-german-based gas (step 1), and a step of forming a germanium thin film on the germanium seed layer using a german-based gas (step 2).
Inventors:
KAKIMOTO AKINAGA
NAKAJIMA SHIGERU
HASEBE KAZUHIDE
NAKAJIMA SHIGERU
HASEBE KAZUHIDE
Application Number:
JP2012046829A
Publication Date:
September 12, 2013
Filing Date:
March 02, 2012
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
C23C16/14; H01L21/205
Domestic Patent References:
| JP2008501226A | 2008-01-17 | |||
| JP2008004935A | 2008-01-10 | |||
| JP2004308007A | 2004-11-04 | |||
| JP2011511160A | 2011-04-07 | |||
| JP2011249764A | 2011-12-08 | |||
| JP2009215645A | 2009-09-24 | |||
| JP2004529489A | 2004-09-24 |
Foreign References:
| US20080035906A1 | 2008-02-14 |
Other References:
JPN6015001666; Ｏｌｕｗａｍｕｙｉｗａ Ｏ． Ｏｌｕｂｕｙｉｄｅ，ｅｔ ａｌ．: 'Ｉｍｐａｃｔ ｏｆ ｓｅｅｄ ｌａｙｅｒ ｏｎ ｍａｔｅｒｉａｌ ｑｕａｌｉｔｙ ｏｆ ｅｐｉｔａｘｉａｌ ｇｅｒｍａｎｉｕｍ ｏｎ ｓｉｌｉｃｏｎ ｄｅｐｏｓｉｔｅｄ ｂｙ ｌｏｗ ｐｒｅｓｓｕｒｅ' Ｔｈｉｎ Ｓｏｌｉｄ Ｆｉｌｍｓ Ｖｏｌｕｍｅ ５０８, 2006, Ｐａｇｅｓ １４-１９
Attorney, Agent or Firm:
Hiroshi Takayama
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