Title:
METHOD FOR FORMING MAGNETIC TUNNEL JUNCTION CELL OF NANO SIZE WITHOUT CONTACT HOLE
Document Type and Number:
Japanese Patent JP2005203772
Kind Code:
A
Abstract:
To provide a method capable of forming an MTJ cell of a nano size by forming a contact within the MTJ cell without forming a contact hole.
The method for forming an MTJ cell of a nano size without a contact hole includes: a first step for stacking MTJ layers on a semiconductor substrate 10; a second step for forming a formation region of an MTJ cell by etching the MTJ layer to a predetermined depth; a third step for sequentially forming an insulating layer and a mask layer on the entire surface of the MTJ layer; a fourth step for etching the mask layer and the insulating layer until the formation region of the MTJ cell is exposed; and a fifth step for depositing a metal layer on the entire surface of the insulating layer and the MTJ layer.
Inventors:
HWANG SOON-WON
SONG I-HUN
YEOM GEUN-YOUNG
CHUNG SEOK-JAE
SONG I-HUN
YEOM GEUN-YOUNG
CHUNG SEOK-JAE
Application Number:
JP2005000445A
Publication Date:
July 28, 2005
Filing Date:
January 05, 2005
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
H01L21/28; G11C11/15; G11C11/16; H01L21/8246; H01L27/10; H01L27/105; H01L43/00; H01L43/08; H01L43/12; (IPC1-7): H01L27/105; H01L21/28; H01L43/08
Attorney, Agent or Firm:
Isono Dozo