Title:
磁気抵抗効果素子の形成方法
Document Type and Number:
Japanese Patent JP5706707
Kind Code:
B2
Abstract:
A three step ion beam etch (IBE) sequence involving low energy (<300 eV) is disclosed for trimming a sensor critical dimension (free layer width=FLW) to less than 50 nm. A first IBE step has a steep incident angle with respect to the sensor sidewall and accounts for 60% to 90% of the FLW reduction. The second IBE step has a shallow incident angle and a sweeping motion to remove residue from the first IBE step and further trim the sidewall. The third IBE step has a steep incident angle to remove damaged sidewall portions from the second step and accounts for 10% to 40% of the FLW reduction. As a result, FLW approaching 30 nm is realized while maintaining high MR ratio of over 60% and low RA of 1.2 ohm-μm2. Sidewall angle is manipulated by changing one or more ion beam incident angles.
Inventors:
Wang Hui
Shipping Tan
Cheng Man
Yuuki Aki
Lee Min
South Korea Sai
Shipping Tan
Cheng Man
Yuuki Aki
Lee Min
South Korea Sai
Application Number:
JP2011028586A
Publication Date:
April 22, 2015
Filing Date:
February 14, 2011
Export Citation:
Assignee:
Headway Technologies, Inc.
International Classes:
H01L43/12; G01R33/09; G11B5/39; H01L43/08
Domestic Patent References:
| JP2010009651A | ||||
| JP2008192222A | ||||
| JP2008186506A | ||||
| JP2005044848A |
Attorney, Agent or Firm:
Patent Business Corporation Tsubasa International Patent Office
Yasushi Santanzaki
Yoichiro Fujishima
Yasushi Santanzaki
Yoichiro Fujishima