Title:
METHOD OF FORMING MASK PATTERN FOR CONTACT HOLE
Document Type and Number:
Japanese Patent JPH03240231
Kind Code:
A
Abstract:
PURPOSE: To form elaborate and minute mask pattern at a part, where the stepped part of semiconductor material layers is conspicuous by forming mask pattern utilizing the forming and removing process of a silicon-on-glass thin film. CONSTITUTION: An insulating layer 3 and a nitride film layer 4 are deposited on a semiconductor substrate 1 and primary patterns 2A and 2B. A silicon-on- glass thin film 5 having a given thickness is formed, and heat treatment is performed. Then, a photoresist layer 6 is formed, and a secondary pattern 5A is formed at the upper part of the film 4. The layer 6 for the secondary pattern is removed, and a photoresist layer 7 is deposited. The entire surface is etched until the upper part 5B of the thin film 5 is exposed. Then, the thin film 5 is removed, and a mask pattern 8A is formed. The film 4 and the layer 3 at the lower part are etched, respectively, and a contact hole 9B is formed. Thus, elaborate and minute mask pattern can be formed at the part, where stepped part is conspicuous. Therefore, the mask pattern, which is used in the highly integrated semiconductor device of a DRAM of 64M class or higher, can be readily formed.
Inventors:
BUN SHIYOUSAN
Application Number:
JP34115790A
Publication Date:
October 25, 1991
Filing Date:
November 29, 1990
Export Citation:
Assignee:
GENDAI DENSHI SANGYO KK
International Classes:
H01L21/3213; H01L21/027; H01L21/308; H01L21/311; H01L21/768; (IPC1-7): H01L21/027; H01L21/3205
Attorney, Agent or Firm:
Fukami Hisaro (2 outside)
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