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Title:
METHOD FOR FORMING MEMBER COMPOSED OF HIGH-MELTING POINT METAL CARBIDE, AND METHOD FOR MANUFACTURING MANUFACTURING DEVICE OF SILICON CARBIDE SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP2014055076
Kind Code:
A
Abstract:

To provide a method for forming high-melting point metal carbide which can secure heat resistance and durability.

The method for forming a member composed of the high-melting point metal carbide includes: a first sintering step of forming the member composed of the high-melting point metal carbide; and subsequently a second sintering step of promoting a reaction between the high-melting point metal carbide while suppressing decarbonization, to obtain durability and heat resistance. Thereby, the member of the high-melting point metal carbide can be formed, which can secure heat resistance and durability.


Inventors:
KUNO HIRONARI
HARA KAZUTO
Application Number:
JP2012199546A
Publication Date:
March 27, 2014
Filing Date:
September 11, 2012
Export Citation:
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Assignee:
DENSO CORP
International Classes:
C04B35/56; C04B35/64; C04B35/645; C30B25/08; C30B29/36
Domestic Patent References:
JP2008535757A2008-09-04
JPS56140078A1981-11-02
JP2010248060A2010-11-04
JP2008243354A2008-10-09
Attorney, Agent or Firm:
Patent Business Corporation Yuai Patent Office