Title:
半導体メモリ素子内に金属キャップを形成する方法
Document Type and Number:
Japanese Patent JP6577490
Kind Code:
B2
Abstract:
Exemplary embodiments of the present invention are directed towards a method for fabricating a semiconductor memory device comprising selectively depositing a material to form a cap above a recessed cell structure in order to prevent degradation of components inside the cell structure in oxidative or corrosive environments.
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Inventors:
Balakrishnan Murari Krishnan
Bian Zylon
Damara Gori Sanker
Lee Hongki
Lujin
Lamarine gum sham
Ju Xiao Yun
Bian Zylon
Damara Gori Sanker
Lee Hongki
Lujin
Lamarine gum sham
Ju Xiao Yun
Application Number:
JP2016567879A
Publication Date:
September 18, 2019
Filing Date:
April 28, 2015
Export Citation:
Assignee:
Sony Semiconductor Solutions Corporation
International Classes:
H01L21/8239; H01L27/105; H01L45/00; H01L49/00
Domestic Patent References:
| JP2008519465A | ||||
| JP2012523116A | ||||
| JP2010192605A | ||||
| JP2013062408A | ||||
| JP2009065184A |
Foreign References:
| WO2012074131A1 | ||||
| WO2011064967A1 |
Attorney, Agent or Firm:
Patent Business Corporation Tsubasa International Patent Office