Title:
METHOD OF FORMING METALLIC LAYER UTILIZING ATOMIC LAYER VAPOR DEPOSITION METHOD AND SEMICONDUCTOR ELEMENT USING THE SAME
Document Type and Number:
Japanese Patent JP3949373
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a metallic layer forming method by which superior step coverage can be obtained by utilizing an atomic layer vapor deposition method, a desired resistance and electrical conductivity can be decided easily, and then, the diffusion of oxygen can be prevented, and to provide a semiconductor element equipped with a metallic layer formed by the method as a barrier metal layer or the lower or upper electrode of a capacitor.
SOLUTION: In this metallic layer forming method, atomic layers are alternately laminated upon another by alternately injecting source gases of a reactive metal A, nitrogen N, and an element B for amorphous coupling of the metal A with nitrogen N into a chamber by the atomic layer vapor deposition method. The semiconductor element is provided with a metallic layer formed by this method as a barrier metal layer, lower electrode, or upper electrode.
Inventors:
Ginger
Hayashi Gen Tin
Cai Yui
All aspects
Choi goodbye
Hayashi Gen Tin
Cai Yui
All aspects
Choi goodbye
Application Number:
JP2000371636A
Publication Date:
July 25, 2007
Filing Date:
December 06, 2000
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
C23C16/34; H01L21/285; C23C16/44; C23C16/455; H01L21/02; H01L21/108; H01L21/203; H01L21/24; H01L21/768; H01L21/822; H01L21/8242; H01L21/8246; H01L27/04; H01L27/105; H01L27/108; (IPC1-7): H01L21/285; C23C16/34; C23C16/44; H01L21/203; H01L27/04; H01L21/822; H01L27/105; H01L27/108; H01L21/8242
Domestic Patent References:
| JP11238698A | ||||
| JP2001254181A | ||||
| JP7130742A | ||||
| JP2000156483A | ||||
| JP6089873A | ||||
| JP2007081427A |
Attorney, Agent or Firm:
Mikio Hatta
Atsushi Nogami
Yasuo Nara
Etsuko Saito
Katsuyuki Utani
Atsushi Nogami
Yasuo Nara
Etsuko Saito
Katsuyuki Utani