PURPOSE: To obtain an ohmic electrode presenting ohmic contact in an extremely thin alloy layer of several hundred or less and having a sufficient function as an electrode by a method wherein a first metal layer is formed on a semiconductor layer irradiated with energetic beams to compose a metal alloy layer with said semiconductor layer, and a second metal layer is formed to provide ohmic electrode.
CONSTITUTION: When an ohmic electrode 35 is formed to a semiconductor layer 31, a first metal layer 32 is deposited on the semiconductor layer 31 and irradiated with energy beams to compose an alloy layer 33 with the semiconductor layer 31. A second metal layer 34 is further deposited on the first metal layer 32. It is preferable that beams such as laser beams 23, particularly, excimer-laser beams are used as the energy beams employed for forming the alloy layer 33 of the first metal layer 32 and the semiconductor layer 31. The thickness of the first metal layer 32 is made thin to the extent that alloying with the semiconductor layer 31 is enabled by the irradiation of energy beams. The first metal layer may be composed of a plurality of metal layers 32, 36 as required.
KAWAI HIROHARU
HASE ICHIRO
KANEKO KUNIO
| JPS59119767A | 1984-07-11 | |||
| JPS5563819A | 1980-05-14 |