METHOD FOR FORMING ORGANIC CONDUCTIVE THIN FILM, AND SEMICONDUCTOR DEVICE

Japanese Patent JP2005086144

A

To provide a method for forming an organic conductive thin film capable of preventing formation of a step at the boundary of plural parts without causing deterioration in the organic conductive thin film, with a simple process.

A pentacen thin film 4 is formed on a silicon substrate 1 where electrodes 3A, 3B are formed, and a photomask 5 is placed on it. A width W of a chrome pattern 51 is the same as the clearance between the electrodes 3A, 3B. The chrome pattern 51 is arranged on a part 43 between the electrodes 3A, 3B of the thin film 4. An oxygen current is brought into contact with the thin film 4, and the thin film 4 is irradiated with ultraviolet rays 6 through the photomask 5. Thus, the part which is irradiated with ultraviolet rays becomes lower in the electric conductivity of the thin film 4 than that of the part 43 which is not irradiated with ultraviolet rays.

JP2002048174	FRICTION MEMBER AND METHOD FOR MANUFACTURING THEREOF
JPH09316209	FRICTION MATERIAL MOLDED PRODUCT AND INTERMEDIATE LAYER MATERIAL
JP2867661	[Title of Invention] Friction material and method for producing the same

NAMIKATA TAKASHI

JP2003319519A

March 31, 2005

September 11, 2003

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ASAHI KASEI CORP

C08J5/14; H01L21/28; H01L21/336; H01L21/762; H01L29/786; H01L51/00; H01L51/05; H01L51/40; (IPC1-7): H01L51/00; C08J5/14; H01L21/28; H01L21/336; H01L21/762; H01L29/786

JP2003508797A	2003-03-04
JP2003508924A	2003-03-04
JPH05183050A	1993-07-23

Tetsuya Mori
Yoshiaki Naito
Cui Shu Tetsu

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