Title:
METHOD FOR FORMING ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM TRANSISTOR
Document Type and Number:
Japanese Patent JP2007335840
Kind Code:
A
Abstract:
To provide a method for forming an organic thin film transistor permitting the formation of the organic thin film transistor with high carrier mobility by a coating method, and provide the organic thin film transistor that is formed by the formation method.
A method for forming an organic thin film transistor is characterized in that a channel layer is formed in a range from 3 μm to 200 μm from the end part of an organic semiconductor film that is deposited by supplying and coating a coating solution comprising an organic semiconductor material onto a substrate to dry it.
COPYRIGHT: (C)2008,JPO&INPIT
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Inventors:
KOFUCHI REIKO
HIRAI KATSURA
HIRAI KATSURA
Application Number:
JP2007070313A
Publication Date:
December 27, 2007
Filing Date:
March 19, 2007
Export Citation:
Assignee:
KONICA MINOLTA HOLDINGS INC
International Classes:
H01L29/786; H01L21/336; H01L51/05; H01L51/30; H01L51/40