PURPOSE: To provide a method for forming an oxide thin film having abrupt surface and thin thickness without producing miss fit on the interface at a low growth temperature, and provide a laminate of oxide high-temperature superconductor and an insulating thin film capable of forming at low growth temperature, making no miss fit on the interface and having abrupt interface and thin thickness, in the improvement of method for forming an oxide thin film such as a high-temperature superconducting thin film and the improvement of a laminate of the oxide thin film and an insulating thin film.

CONSTITUTION: A method for forming a laminate of oxide superconductors comprising bismuth-based, yttrium-based, lanthanum-based, thallium-based semiconductors, etc., where the laminating order of these component-elemental atoms in the oxide superconductors is equal do the two dimensionally laminated order of said component elements in the crystals of said oxide superconductors, on an MX2 type crystal substrate.