Title:
p型のIII族窒化物半導体領域を形成する方法
Document Type and Number:
Japanese Patent JP4124156
Kind Code:
B2
Inventors:
Yoshimoto Susumu
Masaki Ueno
Katsushi Akita
Masaki Ueno
Katsushi Akita
Application Number:
JP2004119491A
Publication Date:
July 23, 2008
Filing Date:
April 14, 2004
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
H01L21/26; H01L33/06; H01L33/32; H01S5/343
Domestic Patent References:
| JP11238692A | ||||
| JP200243619A | ||||
| JP2002208568A |
Foreign References:
| WO2001004940A1 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Tatsuya Shioda
Shiro Terasaki
Masatoshi Shibata
Ichira Kondo
Tatsuya Shioda
Shiro Terasaki
Masatoshi Shibata
Ichira Kondo
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