Title:
METHOD FOR FORMING PATTERN BY USING MASK
Document Type and Number:
Japanese Patent JP3920222
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To make it possible to pattern a film with good accuracy while suppressing the occurrence of damages of a resist in a method for forming a mask including a pattern forming process by lift-off.
SOLUTION: This method for forming patterns by using masks comprises a process for forming multilayer films 5a-5c on an insulating nonmagnetic layer 4, a process for forming a first film 20 composed of organic matter on multilayer films 10a-10c, a process for forming a second film 21 composed of an inorganic film, a process for forming an opening part 21a in a prescribed area of the second film 21 by etching, and a process for etching the first film 20 through the opening 21a to form the pattern of the first film 20 whose edge bites inward from the edge of the pattern of the second film 21.
Inventors:
Yuji Uehara
Kanai Hitoshi
Rimei Kinmine
Yoshinori Otsuka
Kitajima Masamitsu
Kakei Masahiro
Junzo Toda
Keiji Watanabe
Field saki Koji
Miwa Igarashi
Kuramitsu Yoko
Ei Yano
Namiki Takahisa
Hiroshi Shirataki
Keita Otsuka
Kanai Hitoshi
Rimei Kinmine
Yoshinori Otsuka
Kitajima Masamitsu
Kakei Masahiro
Junzo Toda
Keiji Watanabe
Field saki Koji
Miwa Igarashi
Kuramitsu Yoko
Ei Yano
Namiki Takahisa
Hiroshi Shirataki
Keita Otsuka
Application Number:
JP2003000479A
Publication Date:
May 30, 2007
Filing Date:
December 26, 1995
Export Citation:
Assignee:
富士通株式会社
International Classes:
G03F7/26; H01L43/12; G11B5/39; H01L21/027; H01L43/08; (IPC1-7): H01L43/12; G03F7/26; G11B5/39; H01L21/027; H01L43/08
Domestic Patent References:
| JP7065326A | ||||
| JP9073610A |
Foreign References:
| US5087332 |
Attorney, Agent or Firm:
Keizo Okamoto
Previous Patent: JPS3920221
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