METHOD FOR FORMING PATTERN
Document Type and Number:
Japanese Patent JP3415602
PROBLEM TO BE SOLVED: To eliminate defects in the conventional methods, where a greater part of the spread of resist spreads, without the spread being controlled at dissolution formation of a transformed resist mask, even though there is the method for contriving reduction in the number of manufacture processes, using the two resist patterns of a resist mask and a resist mask which are transformed in the direction of spread, causing dissolution in the resist mask.
SOLUTION: An object resist pattern and a thin-film transistor, utilizing the pattern can be made, by forming a recess 7 in the vicinity of a transformed resist pattern 48 in advance, and checking the spread of the transformed resist pattern with the barrier of the recess 7, and thereby guiding, suppressing, and controlling the transformation of the transformed resist pattern 48.
April 04, 2003
May 25, 2001
NEC KAGOSHIMA LTD
G03F7/40; F16K35/00; G03F1/00; H01L21/027; H01L21/302; H01L21/3065; H01L21/3205; H01L21/336; H01L21/77; H01L21/84; H01L27/12; H01L29/04; H01L29/417; H01L29/423; H01L29/76; H01L29/786; (IPC1-7): H01L21/027; G03F7/40; H01L21/3065; H01L21/3205; H01L21/336; H01L29/786