To form a refractory metal nitride used as a barrier metal for wiring so as to be low resistance at a low temperature, and perform from the removal of a natural oxide film to the growth of a contact metal and a barrier metal in a pressure-reduced atmosphere, while preventing the adhesion of a reaction product in a chamber when the film is deposited, in regard to a method for forming a refractory metal nitride film having a step of depositing the refractory metal nitride used as a material of the barrier metal.
The method for forming the refractory metal nitride film, in which the refractory metal nitride film is formed according to a chemical vapor phase deposition method by using a source gas and a reduction gas containing a refractory metallic alkyl amino compound, comprises a step of activating the reduction gas.
COPYRIGHT: (C)2008,JPO&INPIT
OBA TAKAYUKI
JINNAI SHINPEI
MURAKAMI MASASHI
