To provide a method for forming a resist pattern on a substrate having a step thereon having a small width and a large aspect ratio, by which a step portion can be filled with a resist composition in a good condition, a large depth of focus can be obtained with an appropriate exposure latitude, and footing in a resist pattern or generation of scum can be suppressed.
A resist pattern is formed on a substrate having a step portion having a line width of 30 to 200 nm and an aspect ratio of 1.5 to 5.0, by using the following resist composition. The composition comprises: (A) a resin having a mass average molecular weight of 10000 or less and showing increase in the solubility with an alkali by an action of an acid; (B) a compound that generates an acid by irradiation with actinic rays or radiation; and (C) a basic compound that shows decrease in the basicity by irradiation with actinic rays or radiation.
TAKAYAMA JUICHI
YAMASHITA NAOKI
KUMADA SHINJI
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