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Patent Searching and Data


Title:
METHOD FOR FORMING RESIST PATTERN
Document Type and Number:
Japanese Patent JP2015021981
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern including a novel process of exposing a resist composition to EUV or electron beams, by which defects can be efficiently reduced without changing a constitution of the resist composition itself and without inducing degradation in qualities of a resist pattern obtained by using a treating agent.SOLUTION: A development pretreatment is carried out by using a development pretreating agent for lithography, which comprises a water-soluble or alkali-soluble polymer solution.

Inventors:
OSAKI HITOSHI
ODA TOMOHIRO
KUWAZURU YUICHI
FURUKAWA TSUYOSHI
FUJISAWA TOMOHISA
Application Number:
JP2013147421A
Publication Date:
February 02, 2015
Filing Date:
July 16, 2013
Export Citation:
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Assignee:
JSR CORP
International Classes:
G03F7/38; C08F26/00; H01L21/027
Domestic Patent References:
JP2008241931A2008-10-09
JP2013057877A2013-03-28
JP2005274877A2005-10-06
JP2006154004A2006-06-15
JPH08211629A1996-08-20