Title:
METHOD OF FORMING RESIST PATTERN
Document Type and Number:
Japanese Patent JP2716293
Kind Code:
B2
Abstract:
PURPOSE: To make it possible to use again a film to be processed in the case the film to be processed does not pass a developing inspection in a resist silytating process.
CONSTITUTION: In a method of forming by patterning a resist on a film 1 to be processed by a resist silytating process, 10 to 80% of the silytated resist 2 on the film 1 to be processed is removed by dry etching and at the point of time, a developing inspection of the resist is made and in the case the resist passes the inspection, a residual resist is removed.
Inventors:
Nobuyuki Takenaka
Application Number:
JP22292991A
Publication Date:
February 18, 1998
Filing Date:
September 03, 1991
Export Citation:
Assignee:
Sharp Corporation
International Classes:
G03F7/26; G03F7/38; H01L21/027; H01L21/30; H01L21/302; H01L21/3065; (IPC1-7): H01L21/3065; G03F7/26; G03F7/38; H01L21/027
Domestic Patent References:
| JP3177021A |
Attorney, Agent or Firm:
Shintaro Nogawa