PURPOSE: To prevent the influence of a resist surface layer which is hard to dissolve, and form a resist pattern highly conformable to a designed pattern, by adding a process exposing the resist surface to an acid atmosphere after exposure to light and before baking, and dissolving the whole resist surface as far as a specified depth in a developing process.
CONSTITUTION: In order to supplement acid which is insufficient in the vicinity of a resist surface of a silicon substrate coated with a resist layer 2, the laver is spin-coated with solution wherein acetic acid is diluted to 10% with pure water, thereby obtaining an acid supplement layer 3. Then selective exposure to light is performed by using KrF excimer layer 4, arud acid 5 is generated. After the exposure to light, baking is performed at 110°C for 2 minutes. Hence the acid supplement layer 3 on the resist surface, and high-molecular dissolution inhibiter THP-M in the part of the resist where acid is selectively generated are decomposed, and dissolution inhibiting effect is reduced. Then a developing process is performed. The acid supplement layer 3 on the resist surface is dissolved, and a resist pattern 7 can be obtained.
MURAI FUMIO
OKAZAKI SHINJI
HITACHI METALS LTD