To provide a method for forming a resist underlay film having a function as an antireflection film as well as excellent pattern transfer performance and etching resistance, and causing no bend in a pattern during transferring a fine pattern, and to provide a composition for a resist underlay film used for the above method, and a pattern forming method.
The method for forming a resist underlay film comprises: an application step of applying a composition for a resist underlay film (for example, a composition containing a compound having a phenolic hydroxy group, a solvent and an accelerator) on a substrate to be processed; and a film formation step of forming a film of the obtained coating in an oxidative atmosphere having an oxygen concentration of 1 vol% or more and at a temperature of 300°C or higher.
NOMURA NAKAATSU
TOYOKAWA IKUHIRO
SUGITA HIKARI
| JPH0792684A | 1995-04-07 | |||
| JP2002014474A | 2002-01-18 | |||
| JP2004205676A | 2004-07-22 | |||
| JP2006140222A | 2006-06-01 | |||
| JP2005156816A | 2005-06-16 |
Yoshinobu Hagino
Yasuyuki Hiraiwa