Title:
METHOD OF FORMING RESISTOR THIN FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND THIN-FILM RESISTANCE ELEMENT
Document Type and Number:
Japanese Patent JP2011035247
Kind Code:
A
Abstract:
To facilitate formation of a high-resistance element by enhancing controllability of resistivity of a resistor thin film to be formed.
Metal alkylamide (TEMAZ) and silicon alkylamide (TEMASiH) are used as a metal precursor and a silicon precursor, respectively, and the precursors are supplied to a reaction vessel 103 at the same time to perform ALD (atomic layer deposition). In the ALD, supply ratios of TEMAZ and TEMASiH supplied at the same time are controlled by an Ar gas flow ratio, heating temperature or the like to form a metal silicon nitride film of resistivity in accordance with the supply ratios as a resistor thin film.
Inventors:
ADACHI KEN
OKI TSUYOSHI
OKI TSUYOSHI
Application Number:
JP2009181456A
Publication Date:
February 17, 2011
Filing Date:
August 04, 2009
Export Citation:
Assignee:
SONY CORP
International Classes:
H01L21/822; C23C16/30; H01C7/00; H01L27/04
Attorney, Agent or Firm:
Takahisa Sato