Title:
METHOD FOR FORMING SEMICONDUCTOR DEVICE OF MULTILAYER STRUCTURE
Document Type and Number:
Japanese Patent JP3845138
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To selectively remove an undesired layer, by doping the undesired layer which an impurity during growth of the layer, diffusing the impurity into a selected region, and intermixing a layer adjacent to the doped layer in the selected lateral region.
SOLUTION: A thin quantum well layer 4 or the like near a top portion of an Al-containing layer is recrystallized. To avoid a problem accompanied by oxidation of a growth target layer, doping with Si is carried out to grow a GaAs layer 2. The GaAs layer 2 becomes an undesired unnecessary region after completion of recrystallization. Si is provided at a concentration sufficiently higher than a threshold of layer intermixture, and carries out annealing with respect to AlGaAs. As annealing proceeds, Si starts diffusion into a greater volume from the GaAs layer 2, and intermixture starts on a boundary with a peripheral layer. When the concentration of Si is made lower than the concentration of intermixture, the diffusion ends.
Inventors:
Kevin Jay Bianink
Robert El. Thornton
David P. Bohr
Thomas L. Paoli
Jack walker
Robert El. Thornton
David P. Bohr
Thomas L. Paoli
Jack walker
Application Number:
JP35338395A
Publication Date:
November 15, 2006
Filing Date:
December 29, 1995
Export Citation:
Assignee:
XEROX CORPORATION
International Classes:
H01S5/00; H01S5/026; H01L21/18; H01S5/34; H01S5/40; H01S5/343; (IPC1-7): H01S3/18
Domestic Patent References:
| JP5275802A | ||||
| JP5121822A | ||||
| JP3066188A | ||||
| JP6097589A | ||||
| JP4137780A | ||||
| JP5110185A |
Attorney, Agent or Firm:
Atsushi Nakajima
Kato Kazunori
Kato Kazunori