To provide a method for forming a semiconductor device capable of simplifying mask alignment with respect to a resist.

A method for forming a semiconductor device comprises the steps of: preparing a workpiece in which a lower layer resist 12, a metal layer 14, and an upper layer resist 16 are arranged in this order on a substrate 10 in which a semiconductor device is formed; forming a pattern on the upper layer resist 16; forming a pattern on the metal layer 14 by corroding the metal layer 14 with an etching liquid against which the lower layer resist 12 has corrosion resistance using the pattern of the upper layer resist 16; forming a pattern finer than the pattern of the metal layer 14 on the lower layer resist 12 by generating near-field light from an edge of the pattern of the metal layer 14 by irradiating the pattern of the metal layer 14 with light; and transferring the pattern of the lower layer resist 12 onto the substrate 10.