Title:
半導体薄膜の形成方法及び半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4092541
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method which can form a polycrystalline or monocrystalline semiconductor thin film, such as polycrystalline silicon of high crystallization percentage and high quality, etc., easily and at low cost and with large area, and a device to put this method into practice. SOLUTION: A formation method for a polycrystalline (or monocrystalline) semiconductor thin film or a manufacturing method for a semiconductor device, and a device to put it into practice, includes a step where a polycrystalline (or monocrystalline) semiconductor film 7 is obtained, by accelerating the crystallization of a low-class crystalline semiconductor film 7A by the heating or cooling in fusion or half fusion, or non-fusion state by applying flash lamp annealing to this low-class crystalline semiconductor film 7A after forming the low-class semiconductor film 7A on a substrate 1, when forming the polycrystalline (or monocrystal) semiconductor film 7, such as a polycrystalline silicon film of high crystallization percentage and large grain diameter, etc., on the substrate 1 or when manufacturing the semiconductor device, having a polycrystalline (or monocrystal) semiconductor film 7 on the substrate 1.
Inventors:
Hero Yamanaka
Application Number:
JP2001368624A
Publication Date:
May 28, 2008
Filing Date:
December 03, 2001
Export Citation:
Assignee:
ソニー株式会社
International Classes:
G02F1/1368; H01L21/20; H01J9/02; H01J29/04; H01J29/96; H01J31/12; H01L21/26; H01L21/265; H01L21/336; H01L29/786; H01L31/04
Domestic Patent References:
| JP7106247A | ||||
| JP2000133810A | ||||
| JP200243249A | ||||
| JP5764936A | ||||
| JP2114514A | ||||
| JP2126634A | ||||
| JP2000150406A | ||||
| JP799321A | ||||
| JP2000231122A | ||||
| JP2000156346A |
Attorney, Agent or Firm:
Hiroshi Osaka