Title:
METHOD FOR FORMING SI SINGLE CRYSTAL FILM
Document Type and Number:
Japanese Patent JPS61270294
Kind Code:
A
Abstract:
PURPOSE:To obtain a single crystal film having good crystallinity at a relatively low temperature, by depositing a polycrystal Ge film on a substrate having a grooved amorphous insulator layer, heat-treating the deposited polycrystal film, and growing an Si film by the heteroepitaxial growth method. CONSTITUTION:Grooves having a depth (h) and width (l) are formed at an interval (m) on the surface of an amorphous insulator layer 2 formed on a substrate 1, and a polycrystal Ge film 3 preferentially oriented in <100> direction as the direction (Z) perpendicular to the substrate 1 is deposited thereon. The resultant polycrystal Ge film 3 is then heat-treated below the melting point (960 deg.C) of the Ge film 3 to carry out the graphoepitaxial growth and promote the reorientation of Ge crystal grains in the substrate surface and coalescence between the grains so that the direction (Z) perpendicular to the substrate 1 and longitudinal direction (Y) of the grooves may be <100> direction. Thus, the aimed single crystal Ge film 3 is formed. After the surface of the Ge film 3 is leveled, an Si film 4 is grown thereon by the heteroepitaxial growth method.
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Inventors:
EGAMI KOJI
Application Number:
JP11162985A
Publication Date:
November 29, 1986
Filing Date:
May 24, 1985
Export Citation:
Assignee:
NEC CORP
International Classes:
C30B29/06; C30B1/02; H01L21/20; (IPC1-7): C30B1/02; C30B29/06; H01L21/20
Attorney, Agent or Firm:
Uchihara Shin
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