Title:
METHOD FOR FORMING SILICA MEMBRANE, SILICA MEMBRANE, INSULATING MEMBRANE AND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2002363286
Kind Code:
A
Abstract:
To obtain a silica membrane expressing a remarkably low dielectric constant of ≤2.2 and having little moisture absorption as an interlayer insulation in semiconductor elements and the like.
The method for forming a silica membrane is to treat a membrane containing (A) a siloxane compound and (B) a surfactant in a supercritical medium.
Inventors:
HAYASHI EIJI
SHIODA ATSUSHI
NISHIKAWA MICHINORI
YAMADA KINJI
SHIODA ATSUSHI
NISHIKAWA MICHINORI
YAMADA KINJI
Application Number:
JP2001175601A
Publication Date:
December 18, 2002
Filing Date:
June 11, 2001
Export Citation:
Assignee:
JSR CORP
International Classes:
B05D3/02; B05D3/10; B05D3/12; B29C41/02; C08G77/06; C08G77/48; C09D5/25; C09D183/02; C09D183/04; C09D183/14; H01L21/312; H01L21/316; (IPC1-7): C08G77/06; B05D3/02; B05D3/10; B05D3/12; B29C41/02; C08G77/48; C09D5/25; C09D183/02; C09D183/04; C09D183/14; H01L21/312; H01L21/316
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