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Patent Searching and Data


Title:
METHOD FOR FORMING SILOXANE THIN FILM
Document Type and Number:
Japanese Patent JP09039149
Kind Code:
A
Abstract:

To provide a method for forming a siloxane thin film having excellent adhesion without pinholes, which can control the thickness to be thin and can efficiently form the siloxane thin film by an exceedingly simple method at a low cost.

In a hexadecane solution of octadecyl triethoxy silane having a density of 2wt.%, a cleaned slide glass (borosilicate glass) base plate is immersed and heated at 110°C for ten minutes. Next, the base plate 1 is immersed in a container having a chloroform therein, and the chloroform is stirred for ten minutes for performing chloroform cleaning. Further, it is cleaned by flowing water for 10 minutes, so that a siloxane monomolecular film having a contact angle 97° for water and a thickness of 2nm is formed on the base plate 1.


Inventors:
Takebe, Yasuo
Mino, Norihisa
Application Number:
JP1995000189343
Publication Date:
February 10, 1997
Filing Date:
July 25, 1995
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
B32B9/00; B05D1/18; B05D7/24; C03C17/30; C08J7/06; (IPC1-7): B32B9/00