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Title:
METHOD FOR FORMING SILOXANE THIN FILM
Document Type and Number:
Japanese Patent JP3424879
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a method for forming a siloxane thin film having excellent adhesion without pinholes, which can be controlled to be thin, can be efficiently formed by an exceedingly simple method at a low cost even at room temperature.
SOLUTION: In a hexadecane solution having 5wt.% of pyridine and 2wt.% of (tridecafluoro-1,1,2,2-tetrahydrooctyl)triethoxy silane, a cleaned slide glass (borosilicate glass) base plate 1 is immersed at room temperature for an hour. Thereafter, the base plate 1 is immersed in a container having a chloroform therein. The chloroform is stirred for performing chloroform cleaning for 10 minutes. It is further cleaned with flowing water for 10 minutes, so that a water and oil repellent siloxane thin film having a contact angle 115° for water and a contact angle 80° for salad oil is formed on the base plate 1.


Inventors:
Yasuo Takebe
Norio Mino
Application Number:
JP18934295A
Publication Date:
July 07, 2003
Filing Date:
July 25, 1995
Export Citation:
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Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
B32B9/00; B05D1/18; B05D7/24; C03C17/30; C08J7/06; (IPC1-7): B32B9/00; B05D1/18; B05D7/24
Domestic Patent References:
JP5738863A
JP5269918A
JP3166934A
JP2253941A
JP62164537A
JP625850A
JP8169077A
JP8165366A
JP8165365A
Attorney, Agent or Firm:
Hiroyuki Ikeuchi (1 person outside)