Title:
METHOD OF FORMING SPECIFIC ARSENIC-DOPED REGION IN SEMICONDUCTOR SUBSTRATE
Document Type and Number:
Japanese Patent JPS63160326
Kind Code:
A
Abstract:
A method of producing a defined arsenic doping in silicon semiconductor substrates is provided. Preferably, the arsenic doping is produced in the sidewalls and floors of trenches having high aspect ratio which are etched into the substrates. An arseno-silicate glass layer is deposited into these trenches to be used as a diffusion source, the glass layer being removed after the diffusion. The arseno-silicate glass layer is deposited by thermal decomposition from the vapor phase of tetraethylortho silicate Si)OC2H5)4 and triethylarsenate AsO(OC2H5)3. A steep and reproducible doping profile having constant, maximum penetration depth and high arsenic concentration in the substrate surface which is needed for VLSI semiconductor circuits is obtained through the process of the present invention.
Inventors:
TREICHEL HELMUTH (DE)
BECKER FRANK S (DE)
BECKER FRANK S (DE)
Application Number:
JP31181487A
Publication Date:
July 04, 1988
Filing Date:
December 08, 1987
Export Citation:
Assignee:
SIEMENS AG
International Classes:
H01L21/225; H01L21/316; (IPC1-7): H01L21/225
Domestic Patent References:
| JPS60150624A | 1985-08-08 | |||
| JPS4723173A |
Attorney, Agent or Firm:
Tomimura Kiyoshi