METHOD FOR FORMING THIN FILM OF COMPOUND OF GROUP III-V

Japanese Patent JPS60255694

A

PURPOSE:To make reaction occurring on the substrate surface uniform and obtain a thin film Groups III-V with high reproducibility in a short time, by adding the second reaction gas to the first reaction gas in a state in which one reaction gas (the first reaction gas) is passed over the substrate surface as a stationary stream. CONSTITUTION:A thin film of GaAs as a compound of Groups III-V is prepared. In the process, a crustlike GaAs raw material 2 is put into a container 3 and placed in the first region I in a reaction tube 1. On the other hand, a substrate 4 of GaAs placed on a support table 5 is placed in the second region II, and the temperature of the first and second regions I and III is set at 731 deg.C. He gas (B) containing H2 is then introduced into the region I. On the other hand, H2 gas (C) containing He gas and He gas (D) containing H2 gas are alternately fed through a conduit 10 into the region II at a given flow rate in repeated numbers. As a result, the aimed thin film of GaAs in a thickness in proportion to the number of periods of the gas (C) is deposited and grown on the substrate 4 in the specular form, e.g. at 450Angstrom growth speed, based on one period of the gas (C).

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TOMIYAMA YOSHIMI
TAKASHIMA KOUICHIROU
SEKI HISASHI
KOUKETSU AKINORI

JP10953384A

December 17, 1985

May 31, 1984

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MITSUBISHI METAL CORP

C30B25/02; C30B25/14; C30B29/40; H01L21/20; H01L21/205; (IPC1-7): C30B25/02; H01L21/20

JPS56114898A	1981-09-09
JPS56109898A	1981-08-31
JPS5513922A	1980-01-31

Matsuhiro Masahiro

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