Title:
METHOD FOR FORMING THIN FILM AND DEVICE THEREFOR
Document Type and Number:
Japanese Patent JP3169278
Kind Code:
B2
Abstract:
PURPOSE: To form a high-quality and high-characteristic oxide thin film having a high content of oxygen at a lower substrate temp. by sufficiently promote the crystallization during vapor deposition and the oxidation after vapor deposition.
CONSTITUTION: Reactive atomic oxygen 27 is blown against a substrate 2 from an atomic oxygen source 26 during vapor deposition to promote crystallization. Ozone 28 is blown against the substrate 2 by an ozone introducing mechanism 13 placed close to the substrate 2 after vapor deposition to make the ozone partial pressure close to the substrate sufficiently higher than the dissociation pressure of oxygen from the film, hence the inclusion of oxygen in the film is increased, and oxidation is promoted.
Inventors:
Yasuyuki Kawagoe
Shinichi Inoue
Kenichiro Yamanishi
Masaaki Tanaka
Shinichi Inoue
Kenichiro Yamanishi
Masaaki Tanaka
Application Number:
JP26387392A
Publication Date:
May 21, 2001
Filing Date:
October 01, 1992
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
C01G1/00; C01G3/00; C30B29/22; (IPC1-7): C30B29/22; C01G1/00
Domestic Patent References:
| JP3265506A | ||||
| JP1139758A | ||||
| JP1290758A | ||||
| JP211752A | ||||
| JP219455A | ||||
| JP1235285A |
Attorney, Agent or Firm:
Soga Doteru (6 people outside)
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