To provide a method for forming a through hole, which forms a plurality of through holes different in an opening area and a depth at one time by etching in a substrate on which devices and the like are formed.
The method for forming a through hole includes: a first hole forming step of forming a plurality of small holes conjunctionally in a first substrate surface of the substrate including the first substrate surface and a second substrate surface as a back surface of the first substrate surface, to form a first hole by scraping the small holes by etching; a thermally oxidized film forming step of thermally oxidizing the substrate that forms partition walls between the adjacent small holes and bottoms of the small holes to form a thermally oxidized film on the substrate; and a removing step of removing the thermally oxidized partition walls and bottoms and the thermally oxidized film formed on the substrate.
TAKEUCHI JUNICHI
| JP2009006536A | 2009-01-15 | |||
| JP2010191034A | 2010-09-02 | |||
| JP2003326498A | 2003-11-18 | |||
| JP2010262990A | 2010-11-18 | |||
| JP2004237431A | 2004-08-26 |
Osamu Suzawa
Kazuhiko Miyasaka