Title:
METHOD OF FORMING TUNGSTEN FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2005044961
Kind Code:
A
Abstract:
To provide a method of forming a tungsten film while suppressing corrosion of a barrier metal film by a WF6 gas.
After the supply of an SiH4 gas is started at a time t1, the supply of the WF6 gas is started at a time t2, thereby allowing a tungsten nucleus to grow on the barrier metal film. After the tungsten nucleus is allowed to grow on the barrier metal film, the gas supply is switched from the SiH4 to an H2 gas at a time t3, thereby forming a tungsten film on the barrier metal film by using the tungsten nucleus as a nucleus.
Inventors:
WATABE ATSUSHI
Application Number:
JP2003202378A
Publication Date:
February 17, 2005
Filing Date:
July 28, 2003
Export Citation:
Assignee:
SEIKO EPSON CORP
International Classes:
C23C16/14; H01L21/28; H01L21/285; H01L21/3205; H01L23/52; (IPC1-7): H01L21/285; C23C16/14; H01L21/28; H01L21/3205
Attorney, Agent or Firm:
Tetsuya Mori
Yoshiaki Naito
Cui Shu Tetsu
Yoshiaki Naito
Cui Shu Tetsu
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