METHOD OF FORMING WIRING

Title:

METHOD OF FORMING WIRING

Document Type and Number:

Japanese Patent JPH07106283

Kind Code:

A

Abstract:

PURPOSE: To restrain the coverage decrease of Al alloy at a connection part, in the method formed of wiring containing an Al alloy layer or the like.

CONSTITUTION: After a connection hole 14a is formed in an insulating film 14 formed on a semiconductor substrate 10 so as to cover a region doped with impurities, a wiring material layer which contains, in order from below, a Ti layer 16, a TiN layer (or TiON layer) 18, and an Al alloy layer, e.g. Al-Si-Cu alloy layer, 20 is formed by a sputtering method. A wiring layer is obtained by patterning the wiring material layer in accordance with a desired wiring pattern. When the Al alloy layer 20 is formed by the sputtering method, the substrate temperature is set at 100-150°C. Thereby the part where Al alloy coverage ratio becomes 0% can be excluded.

Inventors:

YAMAHA TAKAHISA
HIBINO SATOSHI
NAITO MASARU

Application Number:

JP27133593A

Publication Date:

April 21, 1995

Filing Date:

October 04, 1993

Export Citation:

Click for automatic bibliography generation Help

Assignee:

YAMAHA CORP

International Classes:

H01L21/285; H01L21/28; H01L21/3205; H01L21/768; H01L23/52; (IPC1-7): H01L21/285; H01L21/3205; H01L21/768

Attorney, Agent or Firm:

Toshiaki Izawa

Previous Patent: Image processing equipment, image processing methods and programs

Next Patent: DICING EQUIPMENT