Title:
METHOD FOR GROWING CRYSTAL
Document Type and Number:
Japanese Patent JPH0570277
Kind Code:
A
Abstract:
PURPOSE:To provide the method for growing a mixed crystal bulk crystal which consists of a uniform compsn. having decreased strains and defects and has good quality via a graded layer on a seed crystal relating to the method for growing a mixed crystal substrate material for growing semiconductor crystals of ternary or higher systems. CONSTITUTION:In this method for growing the mixed crystal bulk crystal having the uniform compsn. via the graded layer on the seed crystal, this crystal is constituted in such a manner that the above-mentioned graded layer has the thickness larger than the thickness corresponding to the inflection point of the curve on the side thicker than the thickness at which the stress at the uppermost end of the bulk crystal is max. in the curve indicating a relation between the thickness of the graded layer and the above-mentioned stress.
Inventors:
NAKAJIMA KAZUO
Application Number:
JP40435590A
Publication Date:
March 23, 1993
Filing Date:
December 20, 1990
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
C30B15/00; C30B27/02; C30B29/40; G02B1/02; H01L21/208; H01S5/00; (IPC1-7): C30B15/00; C30B27/02; C30B29/40; G02B1/02; H01L21/208; H01S3/18
Attorney, Agent or Firm:
Aoki Akira (3 outside)
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