To provide a method for growing a group III nitride crystal which has a large size and has a small number of pits formed in the main surface of the crystal by using a plurality of tile substrates.
The method for growing a group III nitride crystal includes steps of: preparing a plurality of tile substrates 10 having main surfaces 10 m having either a convex quadrangular shape or a triangular shape which allow planar filling; arranging the plurality of tile substrates 10 which allow planar filling so that the number of vertices facing each other at an arbitrary point where the vertices of the tile substrates 10 face each other is three or less; and growing a group III nitride crystal 20 on the main surfaces 10 m of the arranged plurality of tile substrates 10.
UEMATSU KOJI
YOSHIDA HIROAKI
FUJIWARA SHINSUKE
| JP2009046377A | 2009-03-05 | |||
| JP2008308401A | 2008-12-25 | |||
| JP2006315947A | 2006-11-24 | |||
| JP2008143772A | 2008-06-26 | |||
| JPH0375298A | 1991-03-29 |