To provide a liquid phase growth system of dipping type and a method of growing the liquid phase, capable of forming a semiconductor film appropriate for mass production of a large area device such as solar cell and the like.
This method of growing the liquid phase grows the liquid phase of semiconductor on a plurality of wafers with use of a plurality of liquid phase growth chambers 3, 4, and 5, and a plurality of growth chambers 3 and 5 of the dipping type liquid phase growth system. There are the liquid phase growth chamber 4 and an annealing chamber 2 in the dipping type liquid phase growth system. The wafer used for the liquid phase growth of semiconductor in the liquid phase growth chamber 4 differs from the wafer used for the annealing treatment in the annealing chamber 2. A semiconductor material is dissolved in the solvent in the liquid phase growth chamber 4, and the wafer is processed by the annealing treatment in the annealing chamber 2.
TANIGAWA ISAO
SHOJI TATSUMI
NAKAGAWA KATSUMI
NISHIDA AKIYUKI
UKIYO NORITAKA
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