Title:
METHOD FOR GROWING NIOBIUM OXYNITRIDE LAYER
Document Type and Number:
Japanese Patent JP2017145498
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method for growing a niobium oxynitride layer having a small carrier density.SOLUTION: The method for growing a niobium oxynitride layer is provided that comprises the following steps of: (a) growing a first niobium oxynitride film on a crystal titanium oxide substrate while the temperature of a crystal titanium oxide substrate is maintained at 600 degrees to 750 degrees in Celsius; and (b) growing a second niobium oxynitride nitride film on the first niobium oxynitride film, while the temperature of the crystalline titanium oxide substrate is maintained at 350 degrees or higher after the step (a), wherein the niobium oxynitride layer comprises the first niobium oxynitride film and the second niobium oxynitride film.SELECTED DRAWING: Figure 1
Inventors:
KIKUCHI RYOSUKE
NAKAMURA TORU
TAMURA SATOSHI
MURASE HIDEAKI
HADO KAZUHITO
NAKAMURA TORU
TAMURA SATOSHI
MURASE HIDEAKI
HADO KAZUHITO
Application Number:
JP2016127243A
Publication Date:
August 24, 2017
Filing Date:
June 28, 2016
Export Citation:
Assignee:
PANASONIC IP MAN CORP
International Classes:
C23C14/06; B01J27/00; B01J35/02; B32B9/00; C01B3/04; C01G33/00; C23C14/34; C25B9/17
Attorney, Agent or Firm:
Kenji Kamada
Hiroo Maeda
Hiroo Maeda
Previous Patent: リチウムイオン二次電池
Next Patent: A manufacturing method and a holder for heat treatment of metal parts
Next Patent: A manufacturing method and a holder for heat treatment of metal parts