Title:
METHOD FOR GROWING SEMICONDUCTOR SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP2537322
Kind Code:
B2
Abstract:
PURPOSE: To provide the method for growing the semiconductor crystal to obtain a high-grade bulk crystal having the little deviation from a stoichiometric compsn. by applying a soln. growth method to the group II-VI compd. semiconductor crystal and studying growth conditions in the method for growing the semiconductor crystal by the soln. growth using a group VI element solvent.
CONSTITUTION: The conditions for growing a melt alloy are set at TA<(Tg+50)°C (1 hour<tA<7 hour) in the soln. growth method of vacuum sealing at least a seed crystal 2, a source crystal 3 and a solvent 4 consisting of a group VI element into a quartz ampoule 1, first holding the quartz ampoule 1 at a melt alloy temp. TA°C for tA time in the state of spatially separating the seed crystal 2 from the source crystal 3 and the solvent 4, then bringing the melt alloy consisting of the source crystal 3 and the solvent 4 into contact with the seed crystal 2 at the growth temp. Tg(Tg<TA), thereby depositing the same II-VI-group compd. semiconductor crystal as the source crystal 3 on the seed crystal 2.
Inventors:
OKUNO YASUO
KATO HIROYUKI
TOMITA SHOTARO
KATO HIROYUKI
TOMITA SHOTARO
Application Number:
JP7423292A
Publication Date:
September 25, 1996
Filing Date:
March 30, 1992
Export Citation:
Assignee:
KANAGAWA KAGAKU GIJUTSU AKADEMII
SUTANREE DENKI KK
SUTANREE DENKI KK
International Classes:
C30B19/08; C30B29/48; H01L21/208; (IPC1-7): C30B19/08; C30B29/48; H01L21/208
Domestic Patent References:
| JP5555521A |
Attorney, Agent or Firm:
Keishiro Takahashi (2 outside)
Keishiro Takahashi
Keishiro Takahashi