Title:
METHOD FOR GROWING SINGLE CRYSTAL AND DEVICE THEREFOR
Document Type and Number:
Japanese Patent JPH0826878
Kind Code:
A
Abstract:
PURPOSE: To provide a method for growing single crystal capable of preventing formation of dislocation of single crystal and to provide a device used for carrying out the method.
CONSTITUTION: A metal plate 1 comprising a high-melting metal such as Mo or W is arranged above the surface of a melt 17 in a state to surround single crystal 16 so as not to obstacle the flow of an Ar gas for controlling oxygen concentration. The metal plate 1 is connected to a high-voltage generating device 2 with a lead wire. A high voltage of about 20,000V (preferably ≥10,000 V) is impressed to the metal plate. Dust such as SiO evaporated and deposited on the wall of a furnace during pulling is adsorbed by static electricity generated by the metal plate 1.
Inventors:
INAMI SHUICHI
FUJIWARA TOSHIYUKI
FUJIWARA HIDEKI
IZUMI TERUO
MORITA HIROSHI
FUJIWARA TOSHIYUKI
FUJIWARA HIDEKI
IZUMI TERUO
MORITA HIROSHI
Application Number:
JP16436494A
Publication Date:
January 30, 1996
Filing Date:
July 15, 1994
Export Citation:
Assignee:
SUMITOMO METAL IND
International Classes:
C30B15/00; C30B29/06; H01L21/208; (IPC1-7): C30B15/00; C30B29/06; H01L21/208
Attorney, Agent or Firm:
Tono Kono