Title:
METHOD FOR GROWING SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPH05306188
Kind Code:
A
Abstract:
PURPOSE:To prevent the polycrystallization from a vessel wall during the growth of a crystal by filling a melt of nearly the same compsn. as the compsn. of a raw material melt between a vessel for growth and an outer vessel and cooling the raw material melt to solidify. CONSTITUTION:The vessel 6 for growth is arranged in the outer vessel 5. The raw material melt is put into this vessel 6 for growth and the melt of nearly the same compsn. as the compsn. of the raw material melt is filled between the vessel 6 for growth and the outer vessel 5 closely up to about the same height as the height of the raw material melt. The melts in and out of the vessel 6 for growth are then simultaneously cooled to solidify and to allow the crystal to grow. As a result, the direct heat release in and out of the vessel for growth is lessened and the reverse projection of the solid-liquid boundary on the wall of the vessel for growth is prevented. The single crystal is thus grown with good reproducibility.
Inventors:
ASAHI TOSHIAKI
ONO RYOICHI
ONO RYOICHI
Application Number:
JP13964292A
Publication Date:
November 19, 1993
Filing Date:
May 06, 1992
Export Citation:
Assignee:
JAPAN ENERGY CORP
International Classes:
C30B11/00; C30B29/48; H01L21/208; (IPC1-7): C30B11/00; C30B29/48; H01L21/208
Attorney, Agent or Firm:
Hiroshi Namikawa